PART |
Description |
Maker |
SB063P200-W-AG SB063P200-W-AG_AL SB063P200-W-AG/AL |
Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp
|
TRANSYS Electronics Lim... TRANSYS Electronics Limited
|
SB040P200-W-AG SB040P200-W-AG_AL SB040P200-W-AG/AL |
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
SB073P200-W-AG SB073P200-W-AG_AL SB073P200-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
|
TRANSYS Electronics Lim... TRANSYS Electronics Limited
|
SB065C015-3-W-AG |
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
SB051C020-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.
|
TRANSYS Electronics Limited
|
SB039C020-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
SB157_106C015-30-W-AG_AL SB157/106C015-30-W-AG/AL |
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
|
TRANSYS Electronics Limited
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR720S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR411 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR367 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|